Ion Irradiation Control of Ferromagnetism in (Ga,Mn)As

We report on a promising approach to the artificial modification of ferromagnetic properties in (Ga,Mn)As using a Ga$^+$ focused ion beam (FIB) technique. The ferromagnetic properties of (Ga,Mn)As such as magnetic anisotropy and Curie temperature can be controlled using Ga$^+$ ion irradiation, originating from a change in hole concentration and the corresponding systematic variation in exchange interaction between Mn spins. This change in hole concentration is also verified using micro-Raman spectroscopy. We envisage that this approach offers a means of modifying the ferromagnetic properties of magnetic semiconductors on the micro- or nano-meter scale.Comment: 4 pages, 4 figures, to appear in Jpn. J. Appl. Phys. (Part 2 Letters

Effect of Ga+^{+} irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers

We report on the magnetic and magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As modified by Ga$^{+}$ ion irradiation using focused ion beam. A marked reduction in the conductivity and the Curie temperature is induced after the irradiation. Furthermore, an enhanced negative magnetoresistance (MR) and a change in the magnetization reversal process are also demonstrated at 4 K. Raman scattering spectra indicate a decrease in the concentration of hole carriers after the irradiation, and a possible origin of the change in the magnetic properties is discussed

Alternating domains with uniaxial and biaxial magnetic anisotropy in epitaxial Fe films on BaTiO[sub 3]

We report on domain formation and magnetization reversal in epitaxial Fe films on ferroelectric BaTiO3 substrates with ferroelastica–c stripe domains. The Fe films exhibit biaxial magnetic anisotropy on top of c domains with out-of-plane polarization, whereas the in-plane lattice elongation of a domains induces uniaxial magnetoelasticanisotropy via inverse magnetostriction. The strong modulation of magnetic anisotropy symmetry results in full imprinting of the a–c domain pattern in the Fe films. Exchange and magnetostaticinteractions between neighboring magnetic stripes further influence magnetization reversal and pattern formation within the a and c domains.Peer reviewe

Spin dependent scattering of a domain-wall of controlled size

Magnetoresistance measurements in the CPP geometry have been performed on single electrodeposited Co nanowires exchange biased on one side by a sputtered amorphous GdCo layer. This geometry allows the stabilization of a single domain wall in the Co wire, the thickness of which can be controlled by an external magnetic field. Comparing magnetization, resistivity, and magnetoresistance studies of single Co nanowires, of GdCo layers, and of the coupled system, gives evidence for an additional contribution to the magnetoresistance when the domain wall is compressed by a magnetic field. This contribution is interpreted as the spin dependent scattering within the domain wall when the wall thickness becomes smaller than the spin diffusion length.Comment: 9 pages, 13 figure

Spintronic transport and Kondo effect in quantum dots

We investigate the spin-dependent transport properties of quantum-dot based structures where Kondo correlations dominate the electronic dynamics. The coupling to ferromagnetic leads with parallel magnetizations is known to give rise to nontrivial effects in the local density of states of a single quantum dot. We show that this influence strongly depends on whether charge fluctuations are present or absent in the dot. This result is confirmed with numerical renormalization group calculations and perturbation theory in the on-site interaction. In the Fermi-liquid fixed point, we determine the correlations of the electric current at zero temperature (shot noise) and demonstrate that the Fano factor is suppressed below the Poissonian limit for the symmetric point of the Anderson Hamiltonian even for nonzero lead magnetizations. We discuss possible avenues of future research in this field: coupling to the low energy excitations of the ferromagnets (magnons), extension to double quantum dot systems with interdot antiferromagnetic interaction and effect of spin-polarized currents on higher symmetry Kondo states such as SU(4).Comment: 11 pages, 5 figures. Proceedings of the 3rd Intl. Conf. on Physics and Applications of Spin-Related Phenomena in Semiconductors, Santa Barbara, 200